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ALN
Aluminum nitride offers a unique combination of high thermal conductivity, moderate strength, good dielectric properties and a coefficient of thermal expansion well-matched to silicon. Kyocera offers metallized and co-fired aluminum nitride substrates, with thermal conductivities of 150-190 W/mK. Metallized substrates generally employ thin film conductors and resistors, although refractory and co-fired structures are also available. Brazing with standard AgCu compositions yields strong, reliable bonding which is comparable to alumina and beryllia ceramics.
Kyocera manufactures single layer LCC, MW/RF and LDMOS power transistor packages in addition to a wide variety of multilayer AlN packages, as is illustrated on the AlN Capabilities Sheet. Several ceramic, metallization and flange/lead options are also described. A number of open-tooled and custom designs have been employed in thermally efficient and mechanically reliable packages.
Applications of AlN packages primarily include telecommunications. Other applications include info processing and hi-reliability.
To contact us for specific product information or to get a quote, please click here or call us at 800-468-2957 for more information.
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