|
|
 |
POWER TRANSISTOR PACKAGES
At Kyocera, Power Transistors Packages are the mainstay of our facility in San Diego and we are the world's leading supplier of Power transistor packages to the wireless industry. These packages are used extensively in the RF chain for power amplification most typically for applicatons in the 500 MHz to 1.9 GHz frequency ranges. Package styles are available for Si LDMOS, Si Bi-Polar and Si/Ge transistors.
We have a large family of open-tooled LDMOS packages along with many years of experience developing these packages. Several are illustrated on our LDMOS Package Product Information Sheet.* They feature high temperature brazed components with direct attachment of the die to the metal heat sink. Several flange options for both thermal performance and cost competetiveness are available.
The Standard Microwave package utilizes proven, robust metallization and BeO as an electrically isolated die attach area and excellent heat sink (at about 220 W/mK). These are typically used for Si and Si/Ge bi-polar die. Several designs have plated through-holes for optimal RF grounding. Both hermetic and non-hermetic versions are available. The Standard Microwave Package - Information Sheet* and Standard RF Package - Information Sheet* illustrate several versions of each.
Applications of power transistor packages primarily include telecommunications. Other applications include info processing and hi-reliability.
To contact us for specific product information or to get a quote, please click here or call us at 800-468-2957 for more information.
*NOTE: In order to view this link, you will need Adobe Acrobat Reader. Download Adobe's Acrobat Reader.
|
|
|
|
Page Top