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     ALN Capabilities
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Aluminum Nitride (AlN) Capabilities

Materials: Substrates/Piece parts: 190 and 170 W/mK
Tape process, dry pressing
As-fired, lapped, annealed, lasered
  Multilayer: 170 and 150 W/mK
Tape cast
Technology: Metallization: Thin film conductors
W: vias and buried (multilayer)
  Lead Frame: Kovar, Alloy 42
  Flange: Cu, CuMoCu (CMC, "1:1:1")
  Brazing: Cusil, Au/Ge, Au/Sn, Incusil
  Plating: Ni, Au
Package Styles: SO-8: F0127: thin film, leadless
F0130: dual die version
  Microwave: A717 (MLP-600):
Thin film, CMC flange, 2GHz
  RF: A916 (500CQ):
Thin film, Cu flange
  LDMOS: CMC flange, AlN window frame
  Custom: Design and production capability
Kyocera Japan: Low cost: 75 W/mK, Reduced temperature cofired
Future: Resistors/Terminations: High power, flanged
Surface mount, flangeless
Contacts: Ralph Gonzalez: (858) 614-2538
  Arne Knudsen: (858) 576-2751
(858) 576-7003 (fax)


AlN Packages
Computer Chips
 

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